Papers by Keyword: Channel Mobility

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Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace
Authors: Ryouji Kosugi, Kenji Fukuda
1345
Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
Authors: Ryouji Kosugi, Norihiko Kiritani, Kenji Suzuki, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Fukuda
1397
Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)
Authors: G. Gudjónsson, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson
1425
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
Authors: Y. Kanzaki, H. Kinbara, Hajime Kosugi, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
1429
Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
Authors: Hiroshi Yano, Yusuke Maeyama, Y. Furumoto, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
945
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
Authors: Dethard Peters, Adolf Schöner, Peter Friedrichs, Dietrich Stephani
769
SiC Delta-Doped-Layer Structures and DACFET
Authors: Kunimasa Takahashi, Osamu Kusumoto, Masao Uchida, Kenya Yamashita, Makoto Kitabatake
629
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing
Authors: Kenji Fukuda, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki
567
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami
1215
SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)
Authors: Osamu Kusumoto, Toshiya Yokogawa, Kenya Yamashita, Kunimasa Takahashi, Makoto Kitabatake, Masao Uchida, Ryouko Miyanaga
1211
Showing 71 to 80 of 90 Paper Titles