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Articles by keyword: «Low-Pressure CVD»

• Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2001 (p323)
• Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD
  Published in: Silicon Carbide and Related Materials 2001 (p367)
• Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining
  Published in: Silicon Carbide and Related Materials 2001 (p755)
• Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal
  Published in: Silicon Carbide and Related Materials - 1999 (p313)
• Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p243)
• In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD
  Published in: Silicon Carbide and Related Materials 2001 (p339)
• Mechanical Testing of Flexible Silicon Carbide Interconnect Ribbons
  Published in: Silicon Carbide and Related Materials 2005 (p1107)
• Modeling of Growth Processes in Epitaxial Reactors
  Published in: Theoretical and Technological Aspects of Crystal Growth (p135)