High Voltage Planar 6H-SiC ACCUFET

Authors: P.M. Shenoy, B.J. Baliga

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Authors: Mrinal K. Das, G.Y. Chung, John R. Williams, N.S. Saks, Lori A. Lipkin, John W. Palmour

High-Performance UMOSFETs in 4H-SiC

Authors: Y. Li, James A. Cooper, Michael A. Capano

High-Reliability ONO Gate Dielectric for Power MOSFETs

Authors: Satoshi Tanimoto, Hideaki Tanaka, Tetsuya Hayashi, Yoshio Shimoida, Masakatsu Hoshi, Teruyoshi Mihara

Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs

Authors: K. Chatty, S. Banerjee, T. Paul Chow, Ronald J. Gutmann

Impact Ionization in 6H-SiC MOSFETs

Authors: Edwige Bano, Thierry Ouisse, Sigo Scharnholz, A. Gölz

Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics

Authors: Satoshi Tanimoto

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

Authors: Tetsuo Hatakeyama, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, Hirofumi Matsuhata, Takashi Shinohe, Kazuo Arai

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation

Authors: Aivars J. Lelis, Daniel B. Habersat, Ronald Green, Neil Goldsman

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300ºC NO Anneal

Authors: Mrinal K. Das, Brett A. Hull, Sumi Krishnaswami, Fatima Husna, Sarah K. Haney, Aivars J. Lelis, Charles J. Scozzie, James D. Scofield