Papers by Keyword: Micropipe

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Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
Authors: N. Vouroutzis, Mikael Syväjärvi, J. Stoemenos, Rositza Yakimova
277
Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
261
Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
Authors: Michael Dudley, X. Huang, William M. Vetter, Philip G. Neudeck
247
4H-SiC Epitaxial Growth for High-Power Devices
Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
131
SiC Epitaxy on Non-Standard Surfaces
Authors: Hiroyuki Matsunami, Tsunenobu Kimoto
125
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.
39
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Authors: Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, Peder Bergman, Björn Magnusson, Erik Janzén
21
Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi
111
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC
Authors: L. Masarotto, Jean Marie Bluet, Gérard Guillot
601
Observation of Planar Defects in 2-inch SiC Wafer
Authors: Hideaki Tanaka, Taro Nishiguchi, Makato Sasaki, Shigehiro Nishino
79
Showing 51 to 60 of 104 Paper Titles