Papers by Keyword: Thick Layers

Abstract: The effect of initial growth condition of 3C-SiC growth on the C-face of 6H-SiC has been studied in sublimation epitaxy. The initial temperature increase to initiate the sublimation has a strong effect on the polytype formation using on-axis substrates. Polytype inclusions of 6H-SiC in the 3C-SiC layers is found to be related to spiral growth. The micropipe dissociation process is discussed. At the slowest ramp-up of the temperature the 3C-SiC does not contain any inclusions. In 1 degree off-oriented substrates there were no 3C-SiC formation. In this case the different ramp-up conditions has an influence on the heights of the steps.

Abstract: The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.