Low Temperature Growth of Patterned ZnO Nanowires and their Field Emission Characteristics
Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/µm at current density of 10µA/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/µm at an emitter-anode gap of 400µm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/µm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.
Y. A. Zhang et al., "Low Temperature Growth of Patterned ZnO Nanowires and their Field Emission Characteristics", Applied Mechanics and Materials, Vols. 110-116, pp. 1918-1922, 2012