Low Temperature Growth of Patterned ZnO Nanowires and their Field Emission Characteristics

Abstract:

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Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/µm at current density of 10µA/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/µm at an emitter-anode gap of 400µm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/µm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.

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Periodical:

Edited by:

Wu Fan

Pages:

1918-1922

DOI:

10.4028/www.scientific.net/AMM.110-116.1918

Citation:

Y. A. Zhang et al., "Low Temperature Growth of Patterned ZnO Nanowires and their Field Emission Characteristics", Applied Mechanics and Materials, Vols. 110-116, pp. 1918-1922, 2012

Online since:

October 2011

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$35.00

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