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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 110-116Low Temperature Growth of Patterned ZnO Nanowires...

Low Temperature Growth of Patterned ZnO Nanowires and their Field Emission Characteristics

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Abstract:

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/µm at current density of 10µA/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/µm at an emitter-anode gap of 400µm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/µm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.

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Mechanical and Aerospace Engineering, ICMAE2011

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Periodical:

Applied Mechanics and Materials (Volumes 110-116)

Pages:

1918-1922

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.110-116.1918

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Online since:

October 2011

Authors:

Yong Ai Zhang, Jin Yang Lin, Chao Xing Wu, Tai Liang Guo

Keywords:

Field Emission, Patterned Growth, ZnO Nanowire

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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