Work around Moore’s Law: Current and next Generation Technologies

Abstract:

Interconnect dimensions and CMOS transistor feature size approach their physical limits, therefore scaling will no longer play an important role in performance improvement. So, instead of trying to improve the performance of traditional CMOS circuits, integration of multiple technologies and different components in a heterogeneous system that is high performance will be introduced “moore than more” and CMOS replacement”beyond CMOS” will be explored. This paper focuses on Technology level trends where it presents “More Moore”:New Architectures (SOI, FinFET, Twin-Well),”More Moore” :New Materials (High-K, Metal Gate, Strained-Si) ,”More than Moore”:New Interconnects Schemes (3D, NoC, Optical, Wireless), and ”Beyond CMOS” :New Devices (Molecular Computer, Biological computer, Quantum Computer) .

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 3278-3283
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.3278
• Online since: October 2011
• Authors: Khaled Salah Mohamed
• Keywords: 3D, Beyond CMOS, Carbon Nanotube (CN), FinFET, Moore, Moore than More, TSV

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