Copper Indium Silicon Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering

Article Preview

Abstract:

Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); XRD studies of the annealed films indicate the presence of CuInSi, a peak at about 2θ=42.400°. The morphology of the film surface was studied by SEM. The nanocrystallization with needle shape of CuInSi could be seen clearly. The grain size is a few hundred angstroms.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

3289-3292

Citation:

Online since:

October 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Donglu Shi. Functional Thin Films and Functional Materials. (Tsinghua University Press and Springer, (2002), Chap. 5.

Google Scholar

[2] D. Stroud, F.P. Pan. Phys. Rev. B 17(4), 1602(1978).

Google Scholar

[3] P. Sheng. Phys. Rev. Letts. 45(1), 60(1980).

Google Scholar

[4] D.J. Bergman. Phys. Rev. Letts. 44(19), 1285(1980).

Google Scholar

[5] Andrea Campera, Giuseppe Iannaccone. Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations. Solid-State Electronics, 49 (2005): 1745-1753.

DOI: 10.1016/j.sse.2005.10.002

Google Scholar

[6] Chyuan Haur Kao, Chao Sung Lai, Chen Sheng Huang, K.M. Fan. Ge nanocrystal charge trapping devices fabricated by one-step oxidation on poly-SiGe. Applied Surface Science, 255, ( 2008): 2512-2516.

DOI: 10.1016/j.apsusc.2008.07.195

Google Scholar