Copper Indium Silicon Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering

Abstract:

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Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); XRD studies of the annealed films indicate the presence of CuInSi, a peak at about 2θ=42.400°. The morphology of the film surface was studied by SEM. The nanocrystallization with needle shape of CuInSi could be seen clearly. The grain size is a few hundred angstroms.

Info:

Periodical:

Edited by:

Wu Fan

Pages:

3289-3292

DOI:

10.4028/www.scientific.net/AMM.110-116.3289

Citation:

J. S. Xie et al., "Copper Indium Silicon Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering", Applied Mechanics and Materials, Vols. 110-116, pp. 3289-3292, 2012

Online since:

October 2011

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Price:

$35.00

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