Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base

Xiao Bo Xu; He Ming Zhang; Hui Yong Hu; Jian Li Ma; Li Jun Xu

doi:10.4028/www.scientific.net/AMM.110-116.3311

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 110-116Generalized Early Voltage Model of Bipolar...

Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base

Abstract:

The standard Early voltage of the SPICE Gummel-Poon model (SGP) is generalized for SiGe npn heterojunction bipolar transistors (HBTs). An accurate model for Early effects compatible with the SGP model is obtained considering graded germanium induced bandgap narrowing effect in the base in modern SiGe HBTs and simplified to a compact model which is consistent with ISE TCAD simulation results. The presentation of the Early effect model is significant for the design and simulation of the high performance SiGe BiCMOS technology.

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Periodical:

Applied Mechanics and Materials (Volumes 110-116)

Pages:

3311-3315

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.110-116.3311

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Online since:

October 2011

Authors:

Xiao Bo Xu, He Ming Zhang, Hui Yong Hu, Jian Li Ma, Li Jun Xu

Keywords:

Early Effect, Herojunction Bipolar Transistor (HBT), SiGe

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