An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET

Abstract:

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 3332-3337
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.3332
• Online since: October 2011
• Authors: Shan Shan Qin, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Xiao Yan Wang
• Keywords: FD SOI MOSFET, Strained-Si, Subthreshold Current, Surface Voltage

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