An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET

Abstract:

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A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

Info:

Periodical:

Edited by:

Wu Fan

Pages:

3332-3337

DOI:

10.4028/www.scientific.net/AMM.110-116.3332

Citation:

S. S. Qin et al., "An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET", Applied Mechanics and Materials, Vols. 110-116, pp. 3332-3337, 2012

Online since:

October 2011

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Price:

$35.00

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