Model of Electron Scattering of Strained Si /Si1-xGex (100)

Abstract:

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 3338-3342
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.3338
• Online since: October 2011
• Authors: Jian Jun Song, Hua Ying Wu, He Ming Zhang, Hui Yong Hu, Heng Sheng Shan
• Keywords: Mobility, NMOS Devices, Scattering Rates, Strained Si

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