Resistance Switching in Metal Oxide Thin Films and its Memory Application

Tatyana Kundozerova; Genrikch Stefanovich

doi:10.4028/www.scientific.net/AMM.346.29

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 346Resistance Switching in Metal Oxide Thin Films and...

Resistance Switching in Metal Oxide Thin Films and its Memory Application

Abstract:

We explore the unipolar resistance switching effect in sandwich structures based on Nb, Ta and Zr oxide thin films. The structures were fabricated by pulsed laser deposition and low temperature anodic oxidation methods. After electroforming process memory cells demonstrate reproducible switching between low and high resistance states with a resistance ratio around 10². Nonvolatile resistance storage was traced within 40 days. The low-temperature anodic oxidation of Nb was found to be suitable to fabricate flexible nonvolatile memory elements. The parameters of resistive switching are not degraded after 100000 flexing.

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Periodical:

Applied Mechanics and Materials (Volume 346)

Pages:

29-34

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.346.29

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Online since:

August 2013

Authors:

Tatyana Kundozerova, Genrikch Stefanovich

Keywords:

Metal-Insulator-Metal Devices, Niobium Oxide, Resistance Switching, Resistive Random-Access Memory, Tantalum Oxide, Zirconium Oxide

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