Investigation on Silicon V-Grooves Measurement with Spectral Domain Optical Coherence Tomography (SDOCT)

Yu Ping Chen; Yu Wei Qin

doi:10.4028/www.scientific.net/AMM.346.9

Paper Titles

Preface

Device Modeling of Ultrathin Ferroelectric Capacitors
p.3

Investigation on Silicon V-Grooves Measurement with Spectral Domain Optical Coherence Tomography (SDOCT)
p.9

New Construction Materials Based on Automobile Construction Sludge
p.15

Determination of Electronic Conductance of 100 cm² Single Molten Carbonate Fuel Cell
p.23

Resistance Switching in Metal Oxide Thin Films and its Memory Application
p.29

A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and its Circuit Level Design
p.35

A New Approach for Chatter Prediction in Robotic Milling Based on Signal Processing in Time Domain
p.45

Segmentation on the Key Structures of the Fundus Digital Image
p.53

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 346Investigation on Silicon V-Grooves Measurement...

Investigation on Silicon V-Grooves Measurement with Spectral Domain Optical Coherence Tomography (SDOCT)

Abstract:

The objective of this research was to investigate a new detection method for testing a MEMS V-shaped groove in silicon using spectral domain optical coherence tomography (SDOCT) technique with a thermal light source where the V-groove depth, width and bottom width were measured. The SD-OCT technique with non-contact operation and acquisition rate advantage made it suitable for on-line precision measurement of V-shaped grooves in silicon.

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Periodical:

Applied Mechanics and Materials (Volume 346)

Pages:

9-13

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.346.9

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Online since:

August 2013

Authors:

Yu Ping Chen, Yu Wei Qin

Keywords:

MEMS, Microstructure Fabrication, Optical Coherence Tomography, Spectral Interferometric

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