Device Modeling of Ultrathin Ferroelectric Capacitors

Abstract:

A physically based model is developed for modeling the device behavior of ultrathin ferroelectric capacitors by considering ferroelectric/electrode interfacial capacitance and epitaxial strain arising from the lattice misfit in Landau-Ginzburg-Devonshire theory. We constructed the interfacial capacitance-mismatch strain polarization/critical thickness diagrams for the ferroelectric ultrathin capacitor. It is found that, the remanent polarization states and critical thickness for ferroelectricity of thin films is greatly influenced by the interfacial capacitances in the ultrathin capacitors involving strained epitaxial films, and the enhanced interfacial capacitances can make the ultrathin capacitor free from size effects. The results provide some new design rules for improving ferroelectric behaviors of ultrathin film ferroelectric capacitors.

• Periodical: Applied Mechanics and Materials (Volume 346)
• Pages: 3-8
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.346.3
• Online since: August 2013
• Authors: Feng Yang, Wei Bing Wu, Chang Hong Yang, Hai Tao Wu, Guang Da Hu
• Keywords: Capacitor, Ferroelectric, Ferroelectric Device, Interfacial Capacitance, Landau-Ginzburg-Devonshire Theory, Model, Pitaxial Strain, Thin Film

References

[1] F. Yang, M.H. Tang, Z. Ye, Y.C. Zhou et al., J. Appl. Phys. Vol. 102 (2007), p.044504.

[2] F. Yang, G.D. Hu, B. X. Xu, W.B. Wu et al., J. Appl. Phys. Vol. 112 (2012), p.034113.

[3] F. Yang, Y.C. Zhou, M.H. Tang, F. Liu, J. Appl. Phys. Vol. 106 (2009), p.014110.

[4] F. Yang, Y.C. Zhou, M.H. Tang, F. Liu, Y. Ma et al., J. Phys. D: Appl. Phys. Vol. 42 (2009), p.7.

[5] V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne et al., Nature, Vol. 460 (2009), pp.81-84.

DOI: 10.1038/nature08128

[6] V. Garcia, S. Fusil, K. Bouzehouane et al., Science Vol. 327 (2010), pp.1106-1110.

[7] S.L. Miller, R.D. Nasby, J.R. Schwank et al., J. Appl. Phys. Vol. 68, pp.6463-6471 (1990).

[8] F. Yang, M.H. Tang, Y.C. Zhou, X.J. Zheng et al., Appl. Phys. Lett. Vol. 91(2007), p.142902.

[9] M. Stengel and N. A. Spaldin, Nature Vol. 443 (2006), pp.679-682.

[10] M. Stengel, D. Vanderbilt and N.A. Spaldin, Nature Materials Vol. 8 (2009), pp.392-397.

[11] L.W. Chang, M. Alexe, J.F. Scott, J.M. Gregg, Adv. Mater. Vol. 21 (2009), pp.4911-4914.

[12] D.J. Kim, J.Y. Jo, Y.S. Kim, Y.J. Chang et al., Phys. Rev. Lett. Vol. 95 (2005), p.237602.

[13] K.J. Choi, M. Biegalski, Y.L. Li, A. Sharan et al., Science 306 (2004), pp.1005-1009.

[14] J. Junquera and P. Ghosez, Nature Vol. 422 (2003), pp.506-509.

[15] N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. Vol. 98 (2007), p.257603.

[16] Y.L. Li, L.E. Cross, and L. Q. Chen, J. Appl. Phys. Vol. 98 (2005), p.064101.

[17] Y.L. Li and L.Q. Chen, Appl. Phys. Lett. Vol. 88 (2006), p.072905.

[18] J.X. Zhang, D.G. Schlom, L.Q. Chen and C.B. Eom, Appl. Phys. Lett. Vol. 95(2009), p.122904.

[19] Values of the materials parameters (in SI units, where the temperature T in ℃) used in the simulation. α1=3. 8(T-479)×105, α11=-2. 097×108, α111=1. 294×109, α123=-2. 5×109, α1111=3. 863× 1010, Q11=0. 1, Q12=-0. 034, Q44=0. 058, c11=1. 78×1011, c12=0. 96×1011, c44=1. 22×1011, G11=2. 786 ×10-10.

[20] J.Y. Jo, Y.S. Kim, T.W. Noh, J.G. Yoon et al., Appl. Phys. Lett. Vol. 89(2006), p.232909.

[21] A.G. Zembilgotov, N.A. Pertsev, H. Kohlstedt et al., J. Appl. Phys. Vol. 91 (2002), p.2247.