A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and its Circuit Level Design

Abstract:

RTD (resonant tunneling diode) is a nonlinear device in nm scale level and operates at ps time level which is promising to be used into integrated circuits in the coming years. J.N.Schulmans physical model has beenproven to be suitable to emulate the device accurately. In this paper, a novelRTD based on new material structure is proposed which could reach a relative high PVCR (peak-valley-current-ratio). Then NFP (Nonlinear Fitting based on Physical model) method which is suitable to calculate the parameters for Schulmans physical model more quickly is proposed. At the end of paper the SPICE model of the proposed RTD is proven that it could emulate the RTD device, and shows its application ability in high frequency oscillation circuit.

• Periodical: Applied Mechanics and Materials (Volume 346)
• Pages: 35-41
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.346.35
• Online since: August 2013
• Authors: Qi Wang, Yang Li, Si Dan Du
• Keywords: AlGaAsP, GaAs, Modeling, Resonant, SPICE, Tunneling

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