Modeling the Phonon Transport in Nanowire with Different Cross-Section

Gao Hui Su; Zi Chun Yang; Feng Rui Sun

doi:10.4028/www.scientific.net/AMM.401-403.852

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 401-403Modeling the Phonon Transport in Nanowire with...

Modeling the Phonon Transport in Nanowire with Different Cross-Section

Abstract:

The phonon transport in silicon nanowire was simulated by Monte Carlo Method (MCM). The effect on the phonon transport of the boundary reflection mode, cross-section size and cross-section shape was studied. Analysis shows that diffuse reflection can result in phonon accumulation at the circumferential boundary. As the cross-section size decrease, the nonuniformity of the temperature distribution within the cross-section becomes more severe. When the area of the square cross-section silicon nanowire (SCSN) is equal to that of the circular cross-section silicon nanowire (CCSN), the thermal conductivity of them is more close to each other.

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Periodical:

Applied Mechanics and Materials (Volumes 401-403)

Pages:

852-855

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.401-403.852

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Online since:

September 2013

Authors:

Gao Hui Su, Zi Chun Yang, Feng Rui Sun

Keywords:

Cross-Section, Monte Carlo Method, Nanowire, Phonon Transport, Thermal Conductivity (TC)

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