Temporary Resistive Switching Effect in Cu2O Based Heterostructure

Chang Kun Wu; Yong Dan Zhu; Hong Hua Liao; Jian Jun Tan

doi:10.4028/www.scientific.net/AMM.401-403.836

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 401-403Temporary Resistive Switching Effect in Cu2O Based...

Temporary Resistive Switching Effect in Cu₂O Based Heterostructure

Abstract:

We report a temporary resistive switching (RS) behavior of Cu2O based heterostructure. The Cu2O films were deposited by PLD method under different oxygen pressure (10-2 Pa and 10Pa). The results show that the RS performance of Cu2O (10Pa) is better than that of Cu2O (10-2 Pa). The Cu2O (10Pa) based heterostructure shows high resistive switching ratio of over 103 at read voltage of -0.5V after applied 3V/-5V pulse voltages. Moreover, the resistance states could be switched reversibly among multilevel resistance states by changing the magnitude of set or reset pulse voltages. It is demonstrated that the RS mechanism agrees with the carrier injection-trapped/detrapped process at the interface.

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Applied Mechanics and Materials (Volumes 401-403)

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836-839

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https://doi.org/10.4028/www.scientific.net/AMM.401-403.836

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September 2013

Authors:

Chang Kun Wu, Yong Dan Zhu, Hong Hua Liao, Jian Jun Tan

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Multi-Level, Resistive Switching Effect, RS Mechanism, Temporary

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