Photo-Electronic Properties of Titanium Dioxide Nano Thin Films

Sheng Lung Tu; Yen Hsun Su; Yun Hwei Shen; Dah Tong Ray; Yu Chun Wu; Tao Hsing Chen

doi:10.4028/www.scientific.net/AMM.479-480.50

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 479-480Photo-Electronic Properties of Titanium Dioxide...

Photo-Electronic Properties of Titanium Dioxide Nano Thin Films

Abstract:

In this study, nano-titanium films of different thickness were deposited. By adjusting it is found that when the thickness of the titanium films was in the nano-scale, the electric resistivity of the titanium films decreased. Furthermore, the deposited titanium was transformed into titanium oxide by maintain an oxygen atmosphere and using a rapid annealing furnace during sputtering. When oxidized nano titanium film is sputtered on a low-electric-resistive metal thin film, the photo-electronic properties of Nano-thin film will be enhanced.

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Periodical:

Applied Mechanics and Materials (Volumes 479-480)

Pages:

50-54

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.479-480.50

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Online since:

December 2013

Authors:

Sheng Lung Tu, Yen Hsun Su, Yun Hwei Shen, Dah Tong Ray, Yu Chun Wu, Tao Hsing Chen

Keywords:

Nano Titanium Dioxide, Nano-Titanium, Photoelectric Properties, Ultra-High Vacuum Ion Beam Sputter

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