The Friction Characteristics and Microscopic Properties of Composite Electroplating Thin Films

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The development of composite thin film materials bloomed with increasing demand and technical improvements. They have been used in various engineering areas, such as micro-conductor, sensors, and micro-electro-mechanical-system (MEMS) [1-. Nowadays, scientists were able to electroplate silicon carbide thin films directly on metal materials. Silicon carbide has many excellent mechanical properties, such as high Youngs modulus, high melting point, high hardness, and chemical inertness with resistance to high temperature oxidation and creep [4-7]. It is widely utilized in automotive and aerospace industry. Hence, it is very important to improve the durability and reliability of electroplated silicon carbide thin films.

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60-63

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December 2013

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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[1] W. R. Ashurst, C. Yau, C. Carraro, C. Lee, G. J. Kluth, R. T. Howr, and R. Maboudian, 2001, Alkene based monolayer films as anti-stiction coatings for polysilicon MEMS, Sensors and Actuators, A: Physical, Vol. 91, No. 3, pp.239-248.

DOI: 10.1016/s0924-4247(01)00593-3

Google Scholar

[2] A. K. Jamting, J. M. Bell, M. V. Swain, and N. Schwarzer, 1997, Investigation of the elastic modulus of thin films using simple biaxial bending techniques, Thin Solid Films, Vol. 308-309, pp.304-309.

DOI: 10.1016/s0040-6090(97)00559-2

Google Scholar

[3] S. P. Baker, 1997, Between nanoindentation and scanning force microscopy: Measuring mechanical properties in the nanometer regime, Thin Solid Films, Vol. 308-309, pp.289-393.

DOI: 10.1016/s0040-6090(97)00556-7

Google Scholar

[4] M. Bhatnagar , B. J. Baliga, 1993, Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices, IEEE Transactions on electron devices, VOL. 40.

DOI: 10.1109/16.199372

Google Scholar

[5] V.E. Chelnokov , A.L. Syrkin, 1997, High temperature electronics using Sic: actual situation and unsolved problems, Materials Science and Engineering, pp.248-253.

DOI: 10.1016/s0921-5107(96)01990-3

Google Scholar

[6] H. J. Kim , R. F. Davis, 1986, Theoretically predicted and experimentally determined effects of the Si (Si + C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films, J. Appl. Phys. 60 (8).

DOI: 10.1063/1.337075

Google Scholar

[7] J. D. Hwang, Y. K. Fang, Y. J. Song , D. N. Yaung, 1995, Epitaxial growth and electrical characteristics of β-SiC on Si by low-pressure rapid thermal chemical vapor deposition, Jpn. J. Appl. Phys., 34, 1447.

DOI: 10.1143/jjap.34.1447

Google Scholar

[8] W. C. Oliver, G. M. Pharr, 1992, An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments", J. Mater. Res., Vol. 7, No. 6. application., Materials Characterization Vol. 48, pp.11-36.

DOI: 10.1557/jmr.1992.1564

Google Scholar

[9] W. C. Oliver, G. M. Pharr, 2004, Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology, J. Mater. Res., Vol. 19, No. 1.

DOI: 10.1557/jmr.2004.19.1.3

Google Scholar

[10] G. M. Pharr, W. C. Oliver, F. R. Brotzen, 1992, On the generality of the relationship among contact stiffness, contact area, and elastic modulus during indentation, Materials Research Society, J. Mater. Res., Vol. 7, No. 3.

DOI: 10.1557/jmr.1992.0613

Google Scholar