Atomic Layer Deposited Al2O3 Barrier Layers on Flexible PET Substrates

Article Preview

Abstract:

Atomic layer deposition (ALD) is utilized to grow high performance aluminum oxide (Al2O3) barrier films on flexible PET substrates, where the effects of precursor pulse time and deposition temperature on the film properties are also studied in this work. Significant differences are observed that the water vapor transmission rate of the PET substrate is largely improved by coating the Al2O3 barrier films. Further observations on the surface roughness, optical transmittance, adhesion, mechanical properties of the deposited films are also conducted. The results show that the Al2O3 film deposited with 10 msec precursor pulse time and 60°C deposition temperature behaves the best performance.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

80-85

Citation:

Online since:

December 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Kim, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. 2 (2003), p.31.

Google Scholar

[2] J.D. Ferguson, A.W. Weimer, S.M. George, Thin Solid Films 371 (2000), p.95.

Google Scholar

[3] M. Ritala, M. Leskela, J. Dekker, C. Mutsaers, P.J. Soininen, J. Skarp, Chem. Vap. Deposition 5 (1999), p.7.

DOI: 10.1002/(sici)1521-3862(199901)5:1<7::aid-cvde7>3.0.co;2-j

Google Scholar

[4] J.W. Elama, Z.A. Sechrista, S.M. George, Thin Solid Films 414 (2002), p.43.

Google Scholar

[5] D. Kim, H. Kang, J.M. Kim, H. Kim, Applied Surface Science 257 (2011), p.3776.

Google Scholar

[6] Y.G. Lee, Y.H. Choi, I.S. Kee, H.S. Shim, Y.W. Jin, S. Lee, K.H. Koh, S. Lee, Organic Electronics 10 (2009), p.1352.

Google Scholar

[7] T. Hirvikorpi, M. Vaha-Nissi, J. Nikkola, A. Harlin, M. Karppinen, Surface and Coatings Technology 205 (2011), p.5088.

DOI: 10.1016/j.surfcoat.2011.05.017

Google Scholar

[8] J.N. Ding, X.F. Wang, N.Y. Yuan, C.L. Li, Y.Y. Zhu, B. Kan, Surface and Coatings Technology 205 (2011), p.2846.

Google Scholar

[9] W.C. Oliver and G.M. Pharr, J. Mater. Res. 7 (1992), p.1564.

Google Scholar