Extraction of Parasitic Parameters on Surface Acoustic Wave Device

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Abstract:

In this study, we propose an approach to compute the parasitic parameters of an surface acoustic wave (SAW) resonator, which is fabricated on 36o YX lithium tantalate substrate using standard semiconductor processes. The measured admittances of the SAW resonator are used to calculate the corresponding counter parts by applying the Kramers-Kronig relations. The parasitic parameters are then retrieved by minimizing the errors between the calculated and measured admittances.

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264-267

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December 2013

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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