Switching Behavior of Titania-Zinc Oxide Composites Thin Films

Abstract:

Single layer of titanium dioxide (TiO₂) is common metal oxide in fabricating memristor device. In this study, two types of memristor with composite metal oxide thin films will be demonstrated. The two types of memristor are titanium dioxide (TiO₂) thin film coated on zinc oxide (ZnO) thin film and ZnO coated on TiO₂ thin film. Sol-gel spin coating method was to coat metal oxide thin film and sputtering method for depositing the metal contact. Platinum (Pt) was selected as the top electrode and indium tin oxide (ITO) as the bottom electrode. The electrical characteristics were defined by performing I-V measurement using two point probe equipment. I-V characteristics showed shape of pinched hysteresis loop for both samples. Sample with TiO₂ coated on ZnO has slightly higher R_off/R_on ratio than sample ZnO coated on TiO₂ which means it more memristive than another one. The cross-section of sample with TiO₂ coated on ZnO had been performed as well by using Field-Emission Scanning Electron Microscopy (FESEM).

• Periodical: Applied Mechanics and Materials (Volume 749)
• Pages: 308-312
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.749.308
• Online since: April 2015
• Authors: Shafaq Mardhiyana Mohamat Kasim*, Nor Azira Akma Shaari, Raudah Abu Bakar, Sukreen Hana Herman
• Keywords: FESEM, I-V Characteristics, Memristor, R_off/R_on Ratio, Sol-Gel Spin Coating, Sputtering, TiO₂, ZNO

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