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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1035Optical Emission Spectroscopy Measurement of...

Optical Emission Spectroscopy Measurement of Ar\H₂\CH₄ RF Plasma for Nano-Crystal Diamond Film Deposition

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Abstract:

Ar\H₂\CH₄ gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH₄\ H₂ ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that H_α_, H_β, H_γ, CH, C₂ were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH₄/H₂ was greater than 3%. The intensity of C₂ was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.

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Proceedings of 2014 International Conference on Material Science and Engineering

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Periodical:

Advanced Materials Research (Volume 1035)

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373-378

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https://doi.org/10.4028/www.scientific.net/AMR.1035.373

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Online since:

October 2014

Authors:

Yan Chao Shi, Qin Jian Zhang, Jia Jun Li, Guang Chao Chen*

Keywords:

Nano-Crystal Diamond, OES, RF Plasma

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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