DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

Abstract:

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO₂ thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V₂O₃, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO₂, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

• Periodical: Advanced Materials Research (Volume 1053)
• Pages: 332-336
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1053.332
• Online since: October 2014
• Authors: Ya Qiao, Yuan Lu, Hua Yang, Yong Shun Ling
• Keywords: Annealing, DC Magnetron Sputtering, Room-Temperature Phase Transition, Synthesis, Vanadium Oxide Thin Film

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