Growth of GaN Film on Graphene by HVPE

Shun Yu He; Bing Cao; Qiang Yu; Lin Qi; Chin Hua Wang; Yu Xu; Ji Cai Zhang; Qian Sun

doi:10.4028/www.scientific.net/AMR.1061-1062.175

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1061-1062Growth of GaN Film on Graphene by HVPE

Growth of GaN Film on Graphene by HVPE

Abstract:

A method to grow gallium nitride (GaN) films directly on the graphene layers by hydride vapor phase epitaxy (HVPE) method is reported in this work. We used a chemical vapor deposition (CVD) method to grow graphene on a copper foil, and the test results showed the presence of monolayer graphene at most regions. GaN films were grown on the graphene/MO-GaN substrate (GaN which was grown by metal organic vapor phase deposition) and MO-GaN template by HVPE method. Raman Spectroscopy, Scanning Electron Microscopy (SEM), and X-Ray Diffraction (XRD) were adopted for characterization. By comparing with the MO-GaN substrate, the crystalline quality of the GaN films were both increased. However, the crystalline quality of the HVPE-GaN with graphene interlayer is slightly lower than that directly grown on MO-GaN.