Effect of Eu/Co Doping on the Resistive Switching Properties of BiFeO3 Thin Films

Yong Dan Zhu; Cheng Hu; An You Zuo

doi:10.4028/www.scientific.net/AMR.1061-1062.189

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1061-1062Effect of Eu/Co Doping on the Resistive Switching...

Effect of Eu/Co Doping on the Resistive Switching Properties of BiFeO₃ Thin Films

Abstract:

BiFeO₃ and Eu/Co doped BiFeO₃ thin films have been grown on Nb:SrTiO₃ substrates with pulsed laser deposition using the same growth conditions. It was shown that the characteristic of resistive switching would be enhanced by Co doping. By changing the polarity of the external voltage, the BiFe_0.95Co_0.05O₃ is witched between multilevel stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude and shows stable resistance states. The resistive switching is understood by the electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the interface, oxygen vacancy and Co doping play important role in enhanced RS behavior. Keywords: Resistive switching, element doping, resistive switching mechanism.

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Periodical:

Advanced Materials Research (Volumes 1061-1062)

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189-192

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https://doi.org/10.4028/www.scientific.net/AMR.1061-1062.189

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Online since:

December 2014

Authors:

Yong Dan Zhu*, Cheng Hu, An You Zuo

Keywords:

Element Doping, Resistive Switching, Resistive Switching Mechanism

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