Preparation and Characterization of Nanometer Gallium Nitride by Gas-Solid Reaction

Kai Ji He; Shu Cai Wang; Kai Ming Wang

doi:10.4028/www.scientific.net/AMR.1118.97

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1118Preparation and Characterization of Nanometer...

Preparation and Characterization of Nanometer Gallium Nitride by Gas-Solid Reaction

Abstract:

Firstly, nano Gallium oxide(Ga₂O₃), as raw material of nano Gallium nitride(GaN), was prepared by special liquid-phase precipitation method. Subsequently，nano GaN powder was prepared by ammonia solution method through self-made experimental apparatus，and characterized by XRD and TEM methods. By controlling reaction temperature, reaction time and nitrogen flow，optimum parameters were determined to prepare nano GaN powder. Result shows that nano GaN powder, which is high purity and small particle, Can be prepared at 1000°C~1200°C holding above 2h and 100L/h flow

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Periodical:

Advanced Materials Research (Volume 1118)

Pages:

97-102

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1118.97

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Online since:

July 2015

Authors:

Kai Ji He, Shu Cai Wang, Kai Ming Wang*

Keywords:

Gallium Nitride（GaN）, Gallium oxide（Ga₂O₃）, Gas-Solid Reaction, Nanomaterials

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