The Structural and Optical Properties of Be-Doped GaAs Grown by MBE

Abstract:

In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.

• Periodical: Advanced Materials Research (Volume 1118)
• Pages: 111-117
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1118.111
• Online since: July 2015
• Authors: Hui Min Jia, Ji Long Tang*, Liang Chang, Dan Fang, Xuan Fang, Xiao Hua Wang, Xiao Hui Ma, Li Xu, Zhi Peng Wei
• Keywords: Be-Doped, GaAs, MBE, PL

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