A Review on the CMP of SiC and Sapphire Wafers

Abstract:

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Chemo-mechanical polishing (CMP) has been a useful method to produce superior brittle wafer surfaces. This paper reviews the CMP of silicon carbide and sapphire wafers, focusing on efficiency of the polishing rate. The effects of slurry type, slurry pH value and mixed abrasives will be discussed in detail.

Info:

Periodical:

Advanced Materials Research (Volumes 126-128)

Edited by:

Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso

Pages:

429-434

DOI:

10.4028/www.scientific.net/AMR.126-128.429

Citation:

Y. G. Wang and L. C. Zhang, "A Review on the CMP of SiC and Sapphire Wafers", Advanced Materials Research, Vols. 126-128, pp. 429-434, 2010

Online since:

August 2010

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Price:

$35.00

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