Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers

Yong Guang Wang; Liang Chi Zhang; Altabul Biddut

doi:10.4028/www.scientific.net/AMR.126-128.511

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 126-128Chemical Effect on the Material Removal Rate in...

Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers

Abstract:

This paper investigates the effects of some chemical factors on the material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The CMP was carried out in alkaline slurry using alumina and ceria particles with hydrogen peroxide. When using the alumina particles, the MRR initially decreases with increasing the slurry pH value until pH = 9. Nevertheless, the application of the ceria particles increases the MRR before the pH of the slurry reaches 10. A higher slurry flow rate brings about a greater MRR.

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Advanced Materials Research (Volumes 126-128)

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511-514

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https://doi.org/10.4028/www.scientific.net/AMR.126-128.511

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Online since:

August 2010

Authors:

Yong Guang Wang, Liang Chi Zhang, Altabul Biddut

Keywords:

Alumina, Ceria, Chemo-Mechanical Polishing (CMP), pH, Removal Rate

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