Electrical Characteristics and Microstructures of Eu₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

• Periodical: Advanced Materials Research (Volume 177)
• Pages: 197-200
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.177.197
• Online since: December 2010
• Authors: X.A. Mei, Min Chen, K.L. Su, A.H. Cai, J. Liu, Wei Ke An, Yong Zhou, M. Jia
• Keywords: Bismuth Titanate, Doping, Ferroelectric, Film

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