Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

Abstract:

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Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

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Periodical:

Edited by:

Yiwang Bao, Li Tian and Jianghong Gong

Pages:

197-200

DOI:

10.4028/www.scientific.net/AMR.177.197

Citation:

X.A. Mei et al., "Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films", Advanced Materials Research, Vol. 177, pp. 197-200, 2011

Online since:

December 2010

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$35.00

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