Ferroelectric Properties and Microstructures of Pr₆O₁₁-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Pr6O11-doped bismuth titanate (BixPryTi3O12 BPT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BPT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. Pr doping into Bi4Ti3O12 (BIT) causes a large shift of the Curie temperature (TC) of paraelectric-ferroelectric phase transition of BIT from 675°C to lower temperature and improvement in dielectric properties. The experimental results indicate that Pr doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT film with y=0.9 were 35 μC/cm2 and 80 kV/cm, respectively. After 3  1010 switching cycles, 20% degradation of Pr is observed in the film.

• Periodical: Advanced Materials Research (Volume 177)
• Pages: 211-214
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.177.211
• Online since: December 2010
• Authors: Min Chen, X.A. Mei, K.L. Su, A.H. Cai, J. Liu, Wei Ke An, Yong Zhou
• Keywords: Bismuth Titanate, Doping, Ferroelectric, Film

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