Growth of Tl-2212 Films on CeO2-Buffered Sapphire Substrates

Qing Lian Xie; hongwei yue; Zi Qian Huang; Guo Hua Huang; Lu Ji; Zheng Wang; Xin Jie Zhao; Lan Fang; Shao Lin Yan

doi:10.4028/www.scientific.net/AMR.197-198.466

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 197-198Growth of Tl-2212 Films on CeO2-Buffered Sapphire...

Growth of Tl-2212 Films on CeO₂-Buffered Sapphire Substrates

Abstract:

Tl₂Ba₂CaCu₂O₈ (Tl-2212) films were prepared on r-cut sapphire substrates buffered with CeO₂ by dc magnetron sputtering and post-annealing method. The in situ two-temperature process was used to grow CeO₂ buffer layers. XRD and AFM measurements showed that CeO₂ films deposited at temperature of 370-470°C were excellent c-axis orientation and had smooth surface. SEM observations demonstrated that the Tl-2212 films’ surface morphology was changed from condensing crystal structure to plate-like structure when the CeO₂ deposition temperature was increased. The best Tl-2212 film’s critical temperature T_c can reach to 108.3 K, and critical current density J_c obtained at 5.33 MA/cm² (77 K, 0 T).

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Advanced Materials Research (Volumes 197-198)

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466-470

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.197-198.466

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Online since:

February 2011

Authors:

Qing Lian Xie, hongwei yue, Zi Qian Huang, Guo Hua Huang, Lu Ji, Zheng Wang, Xin Jie Zhao, Lan Fang, Shao Lin Yan

Keywords:

CeO₂ Film, in Situ Two-Temperature Process, Tl-2212 Superconducting Film

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