Growth of Tl-2212 Films on CeO2-Buffered Sapphire Substrates

Abstract:

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Tl2Ba2CaCu2O8 (Tl-2212) films were prepared on r-cut sapphire substrates buffered with CeO2 by dc magnetron sputtering and post-annealing method. The in situ two-temperature process was used to grow CeO2 buffer layers. XRD and AFM measurements showed that CeO2 films deposited at temperature of 370-470°C were excellent c-axis orientation and had smooth surface. SEM observations demonstrated that the Tl-2212 films’ surface morphology was changed from condensing crystal structure to plate-like structure when the CeO2 deposition temperature was increased. The best Tl-2212 film’s critical temperature Tc can reach to 108.3 K, and critical current density Jc obtained at 5.33 MA/cm2 (77 K, 0 T).

Info:

Periodical:

Advanced Materials Research (Volumes 197-198)

Edited by:

Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng

Pages:

466-470

DOI:

10.4028/www.scientific.net/AMR.197-198.466

Citation:

Q. L. Xie et al., "Growth of Tl-2212 Films on CeO2-Buffered Sapphire Substrates", Advanced Materials Research, Vols. 197-198, pp. 466-470, 2011

Online since:

February 2011

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$35.00

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