Influence of Hydrogen Dilution on Electrical Properties of Amorphous Silicon Thin Films Deposited on Glass Substrates

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Thin film Amorphous Silicon materials have found wide application in photovoltaic industry. In this paper, thin layers (around 300nm) of intrinsic hydrogenated amorphous silicon (a-Si:H) are fabricated on glass (Corning Eagle2000TM) substrates by employing plasma enhanced chemical vapor deposition (PECVD) system with gas sources of silane and hydrogen. The deposited thin films are proven to be material of amorphous silicon by Raman spectroscopy measurement and their electronic transport properties are thoroughly characterized in terms of photoconductivity, dark conductivity and photo response. The effect of Hydrogen dilution on electrical properties are investigated for a-Si:H thin films deposited in the temperatures range of 150~200°C. Results indicate that a-Si:H thin films on glass substrate owns device-quality electrical properties and could be applied on fabricating thin film solar cells as the absorber layer material and on other photovoltaic or photo electronic devices.

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Periodical:

Edited by:

Chuansheng Wang, Lianxiang Ma and Weiming Yang

Pages:

117-122

DOI:

10.4028/www.scientific.net/AMR.221.117

Citation:

Y. G. Li and D. X. Du, "Influence of Hydrogen Dilution on Electrical Properties of Amorphous Silicon Thin Films Deposited on Glass Substrates", Advanced Materials Research, Vol. 221, pp. 117-122, 2011

Online since:

March 2011

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$35.00

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