Point Defects Generation Kinetics in the Si-SiO2 System and its Influence on the Interface Properties

Daniel Kropman; Tiit Kärner; Sergei Dolgov; Ivo Heinmaa; Charalamos A. Londos

doi:10.4028/www.scientific.net/AMR.222.102

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 222Point Defects Generation Kinetics in the Si-SiO2...

Point Defects Generation Kinetics in the Si-SiO₂ System and its Influence on the Interface Properties

Abstract:

It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130oC the dencity of point defects is less than at lower and higher temperature (1100oC and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes.

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Periodical:

Advanced Materials Research (Volume 222)

Pages:

102-105

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.222.102

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Online since:

April 2011

Authors:

Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Charalamos A. Londos

Keywords:

EPR, Hydrogen Impurity, NMR, Point Defect, Si-SiO₂ Interface

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References

[1] T.Y. Tan, U. Gösele. Appl. Phys. A 37, (1985) p.1.

Google Scholar

[2] D. Kropman, S. Dolgov, T. Kärner, Appl. Phys. A 62 (1996) p.469.

Google Scholar

[3] C. A. J. Ammerlan, in Silicon, edited by P. Siffert and E. F. Krimmel, chapter Springer, ( 2003).

Google Scholar

[4] D. Kropman, E. Mellikov, K. Lott, T. Kärner, I. Heinmaa, T. Laas, A. Medvid, W. Skorupa, S. Prucnal, S. Zvyagin,E. Cizmar, M. Ozerov and J. Wosnitsa. Sol. State Phenomena Vol. 156-158 (2010) p.145.

DOI: 10.4028/www.scientific.net/ssp.156-158.145

Google Scholar

[5] D. Kropman, E. Mellikov, A. Öpik, K. Lott, O. Volobueva, T. Kärner, I. Heinmaa, T. Laas, A. Medvid, Physica B: Cond. Mat., 404, (2009) p.5153.

DOI: 10.1016/j.physb.2009.08.279

Google Scholar

[6] A. Andrianakis, C.A. Londos, A, Misiuk V.V. Emtsev, G.A. Oganesyan, H. Ohyama. Solid State Phenomena Vol. 156-158 (2010) pp.123-128.

DOI: 10.4028/www.scientific.net/ssp.156-158.123

Google Scholar