Point Defects Generation Kinetics in the Si-SiO2 System and its Influence on the Interface Properties
It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130oC the dencity of point defects is less than at lower and higher temperature (1100oC and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes.
D. Kropman et al., "Point Defects Generation Kinetics in the Si-SiO2 System and its Influence on the Interface Properties", Advanced Materials Research, Vol. 222, pp. 102-105, 2011