Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires

Abstract:

Article Preview

The comparative study of indirect and direct gap (Si and ZnO, respectively) semiconductor nanowires (NWs) is reported. The NWs were grown on silicon substrates by gold-assisted self-assembly technique. SEM study demonstrated high-density of nanowires. HRTEM studies show that both types of NWs (Si and ZnO) are the naturally-grown heterostructures consisting of crystalline core and envelope. The variation of photoluminescence properties of NWs with cross section and/or the material of the samples is analyzed.

Info:

Periodical:

Edited by:

Arturs Medvids

Pages:

189-192

DOI:

10.4028/www.scientific.net/AMR.222.189

Citation:

G.Y. Rudko and A.I. Klimovskaya, "Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires", Advanced Materials Research, Vol. 222, pp. 189-192, 2011

Online since:

April 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.