Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires

G.Y. Rudko; A.I. Klimovskaya

doi:10.4028/www.scientific.net/AMR.222.189

Paper Titles

Relaxation of Resonant Excitons in CdSe Nanocrystals: Simple Variational Calculation
p.170

Mechanisms of Strong Photoluminescence from Si Nanocrystals
p.175

Coulomb-Coupled, Protein-Based Computing Arrays
p.181

Detection of the Nanostructures in ZnO Thin Films by Using Optical Methods
p.185

Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires
p.189

Development of Microclimate Regulatory Clothes
p.193

Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si
p.197

Investigation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SOI-MOS Photodiode
p.201

Si-Based Single-Dopant Atom Devices
p.205

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 222Comparative Study of Photoluminescence in Silicon...

Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires

Abstract:

The comparative study of indirect and direct gap (Si and ZnO, respectively) semiconductor nanowires (NWs) is reported. The NWs were grown on silicon substrates by gold-assisted self-assembly technique. SEM study demonstrated high-density of nanowires. HRTEM studies show that both types of NWs (Si and ZnO) are the naturally-grown heterostructures consisting of crystalline core and envelope. The variation of photoluminescence properties of NWs with cross section and/or the material of the samples is analyzed.