Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires
The comparative study of indirect and direct gap (Si and ZnO, respectively) semiconductor nanowires (NWs) is reported. The NWs were grown on silicon substrates by gold-assisted self-assembly technique. SEM study demonstrated high-density of nanowires. HRTEM studies show that both types of NWs (Si and ZnO) are the naturally-grown heterostructures consisting of crystalline core and envelope. The variation of photoluminescence properties of NWs with cross section and/or the material of the samples is analyzed.
G.Y. Rudko and A.I. Klimovskaya, "Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires", Advanced Materials Research, Vol. 222, pp. 189-192, 2011