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Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si

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Abstract:

We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The impurity band was described by using two kinds of band-width definitions and it was found that the calculated Seebeck coefficient strongly depended on the impurity-band definition. In the high impurity-concentration region, the Seebeck coefficient decreased with increasing impurity concentration, and with a peak around 1×1019 cm-3. This result was qualitatively in good agreement with the experimental result, while there was quantitative disagreement between them.

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Periodical:

Advanced Materials Research (Volume 222)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.222.197

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Cite this paper

Online since:

April 2011

Authors:

Faiz Salleh, Hiroya Ikeda

Keywords:

Heavy Doping, Impurity Band, Seebeck Coefficient, Silicon-on-Insulator (SOI), Thermoelectricity

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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