Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si
We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The impurity band was described by using two kinds of band-width definitions and it was found that the calculated Seebeck coefficient strongly depended on the impurity-band definition. In the high impurity-concentration region, the Seebeck coefficient decreased with increasing impurity concentration, and with a peak around 1×1019 cm-3. This result was qualitatively in good agreement with the experimental result, while there was quantitative disagreement between them.
F. Salleh and H. Ikeda, "Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si", Advanced Materials Research, Vol. 222, pp. 197-200, 2011