Modeling of Detector Radiations Response P-I-N in Technology Thin Film on ASIC (TFA) Intended for Digitalization in Medical Imagery

Article Preview

Abstract:

In this work, the study of detector radiations response p-i-n modeling in technology Thin Film on ASIC (TFA) is reported. It has been revealed that for some nanoseconds time formation of preamplifier, the charge induced by the electrons is entirely collected. Nevertheless, a part of the charge created by the holes is integrated, due to the slow transport of this latter, which constitutes a significant limit for detection speeds.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

125-128

Citation:

Online since:

April 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] M Despiesse, G Aneli, S Cpmmichau et al, Characterization of 13 µm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application, (Nuclear instruments and methods in physics research A), (2004).

DOI: 10.1016/j.nima.2003.11.022

Google Scholar

[2] LUTZ G, Semiconductor Radiation Detctors, ( Berlin: Springer-Virlag), (1999), 378 p.

Google Scholar

[3] Sen-Shyong Fann, Yen-Long Jiang, and Huey-Liang Hawang Fellow, Operation of a Novel A-Si: H P-I-N Based X-Ray Detector for Medical Image Applications, ( IEEE Transactions on Electron Devices), Vol. 50, No. 2, February (2003).

DOI: 10.1109/ted.2002.808447

Google Scholar

[4] M. Despeisse, D. Moraes, G. Anelli, et al. Hydrogenated Amorphous Silicon Sensors based on Thin Film on ASIC technology IEEE Nuclear Science Symposium Conference Record , 2005, N35-55 , pp.1389-1394.

DOI: 10.1109/nssmic.2005.1596579

Google Scholar

[5] H. M Branz, A Yelon and B Movaghar: Physics of meyer-Nedel rule in amorphous silicon, (Material research society symposium proceedings), Vol. 336 (1994), p.159.

DOI: 10.1557/proc-336-159

Google Scholar

[6] J-H. Zhou Estimation of the Mobility-Lifetime products in Amorphous Silicon in the Presence of Dispersive Transport: Journal of Applied Physics Vol. 33 (1994), pp.1655-1658.

Google Scholar