Diagnostic of a RF (13.56MHz) Magnetron in Ar/CH₄ Discharge

Abstract:

This work presents an electrical and optical emission diagnostics of radiofrequency (RF) magnetron discharge used for titanium deposition in argon (Ar) and methane (CH4) gas precursor. The plasma was produced in incident power and gas pressure ranges of 20-300W and 15-100mTorr, respectively. We have studied the influence of the system operation parameters (incident power, pressure, proportion of gas precursor) on the self- bias voltage (Vdc) and emission intensity IAr of Ar (750.3nm) line. The results obtained show that the pressure of the optimum operation of the magnetron discharge was around 30 mTorr when the incident power varied from 20 to 300W. The relationship between the intensity of IAr (750.3nm) line and the incident power was established.

• Periodical: Advanced Materials Research (Volume 227)
• Pages: 195-199
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.227.195
• Online since: April 2011
• Authors: Samira Djerourou, Nadia Saoula, Karim Henda
• Keywords: Optical Emission Spectroscopy, RF Magnetron Discharge, Self-Bias Voltage, Sputtering

References

[1] V. Vancoppenolle, P. Y. Jouan, A. Ricard, M. Wautelet, J. P. Dauchot and M. Hecq: Applied Surface Science Vol. 205 (2003), p.249.

DOI: 10.1016/s0169-4332(02)01085-1

[2] C. Boisse-Laporte, O. Leroy, L. de Poucques, B. Agius, J. Bretagne, M. C. Hugon, L. Teulé-Gay and M. Touzeau : Surf. Coat. Technol. Vol. 179 (2004), p.176.

DOI: 10.1016/s0257-8972(03)00856-9

[3] M. F. Dony, A. Ricard, J. P. Dauchot, M. Hecq and M. Wautelet, Surf. Coat. Technol. Vol. 74- 75 (1995), p.479.

DOI: 10.1016/0257-8972(95)08250-6

[4] M. F. Dony, F. Debal, M. Wautelet, J. P. Dauchot, M. Hecq, J. Bretagne, P. Leray and A. Richard, J. Phys. III France Vol. 7 (1997), p.1869.

DOI: 10.1051/jp3:1997228

[5] A. C. Vanderbecq, M. Wautelet, J. P. Dauchot, M. Hecq, A. M. Pointu and A. Ricard, J. Appl. Phys. Vol. 84 (1998), p.100.

DOI: 10.1063/1.368006

[6] T. M. Minea, J. Bretagne, M. Touzeau, J. Phys. D : Appl. Phys. Vol 33 (2000), p.1884.

[7] C. Nouvellon, S. Konstantinidis, J. P. Dauchot, M. Wautelet, P. Y. Jouan, A. Ricard and M. Hecq : J. Appl. Phys. Vol. 92 (2002), p.32.

DOI: 10.1063/1.1481780

[8] Tadashi Nakamura and Kunio Okimura : Jpn. J. Appl. Phys. Vol. 42 (2003), p.5776.

[9] J. Bretagne, C. Boisse Laporte, G. Gousset, O. Leroy, T. M. Minea, D. Pagnon, L. de Poucques and M. Touzeau : Plasma Soueces Sci. Technol. Vol 12 (2003), p. S33.

DOI: 10.1088/0963-0252/12/4/318

[10] B. Fritsche, T. Chevolleau, J. Kolitsch and W. Möller: Vacuum Vol. 69 (2003), p.139.

[11] A. Palmero, E. D. van Hattum, W. M. Arnoldbik, A. M. Vredenberg and F. H. M. Habraken: J. Appl. Phys. Vol. 95 (2004), p.7611.

[12] J. Bretagne, C. Boisse Laporte, L. de Poucques, G. Gousset, M. C. Hugon, J. C. Imbert, O. Leroy, L. Teulé-Gay, M. Touzeau, M. Touzeau, P. Vašina and O. Voldoire in: Nanostructured Thin Films and Nanodispersion Strengthened Coatings, edtied by A. A. Voevodin et al. /Kluwer Academic Publishers. Printed in the Netherlands (2004).

DOI: 10.1007/1-4020-2222-0_11

[13] A. Ricard, C. Nouvellon, S. Konstantinidis, J. P. Dauchot, M. Wautelet, M. Hecq, L. Bombillon and C. Héau, LE VIDE Vol. 2/4 (2002), p.258.