Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System

Abstract:

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In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.

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Periodical:

Edited by:

Fei Hu and Beibei Wang

Pages:

111-114

DOI:

10.4028/www.scientific.net/AMR.279.111

Citation:

J. H. Gong et al., "Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System", Advanced Materials Research, Vol. 279, pp. 111-114, 2011

Online since:

July 2011

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$35.00

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