Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System
In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.
Fei Hu and Beibei Wang
J. H. Gong et al., "Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System", Advanced Materials Research, Vol. 279, pp. 111-114, 2011