Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System

Abstract:

In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.

• Periodical: Advanced Materials Research (Volume 279)
• Pages: 111-114
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.279.111
• Online since: July 2011
• Authors: Jian Hong Gong, Shu Xia Lin, Jun Gao
• Keywords: Boron, Diamond, Ionization Energy, Resistance

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