Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi₄Ti₃O₁₂

Abstract:

Ferroelectric thin films Bi_3.25La_0.75Ti₃O₁₂,Bi_3.15Nd_0.85Ti₃O₁₂ and Bi_3.15(La_0.5Nd_0.5)_0.85Ti₃O₁₂ of A-site substitution of Bi₄Ti₃O₁₂ were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi_3.25La_0.75Ti₃O₁₂ 、Bi_3.15Nd_0.85Ti₃O₁₂ and Bi_3.15(La_0.5Nd_0.5)_0.85Ti₃O₁₂ thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.

• Periodical: Advanced Materials Research (Volumes 287-290)
• Pages: 2318-2321
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.287-290.2318
• Online since: July 2011
• Authors: Shu Lan Guo, Jia Li, Xue Dong Xu
• Keywords: Ferroelectric Thin Film, Pr Values, Sol-Gel (SG)

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