Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12
Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.
Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li
S. L. Guo et al., "Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12", Advanced Materials Research, Vols. 287-290, pp. 2318-2321, 2011