Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12

Abstract:

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Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.

Info:

Periodical:

Advanced Materials Research (Volumes 287-290)

Edited by:

Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li

Pages:

2318-2321

DOI:

10.4028/www.scientific.net/AMR.287-290.2318

Citation:

S. L. Guo et al., "Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12", Advanced Materials Research, Vols. 287-290, pp. 2318-2321, 2011

Online since:

July 2011

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$35.00

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