Improvement of Atomic-Layer-Deposited Al₂O₃/GaAs Interface Quality through a Novel Sulfuration Method

Abstract:

The absence of stable oxide/GaAs interface greatly holds back the step of GaAs-based MOSFETs fabrication. In this letter, we report on the chemical passivation of n-type GaAs surface by introducing a new sulfuration method. X-ray photon-electron spectroscopy (XPS) analyses indicate that most GaAs native oxides and elemental arsenic (As) can be more effectively removed by treating the GaAs surface in CH₃CSNH₂ solution compared to the traditional (NH₄)₂S solution. Capacitance-Voltage characteristics of the CH₃CSNH₂ treated MOS capacitors also presents reduced interfacial layer and equivalent oxide thickness which are well consisted with the conclusion obtained by XPS.

• Periodical: Advanced Materials Research (Volumes 287-290)
• Pages: 2327-2331
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.287-290.2327
• Online since: July 2011
• Authors: Ge Ming Tan, Qing Qing Sun, Hong Liang Lu, Peng Fei Wang, Shi Jin Ding, Wei Zhang
• Keywords: CH₃CSNH₂, GaAs, High-k Gate Dielectrics, Interfical Layer, NH₄)₂S, Sulf-Passivation

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