Synthesis and Characterization of Reduced Graphene Oxide Film as Electronic Material

Juan Yang; Chuan Liang Zang; Lei Sun; Nan Zhao; Ya Zhou Zhou

doi:10.4028/www.scientific.net/AMR.287-290.2356

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Nanocrystallization of Fe-Based Amorphous Alloys Fe_73.5Cu₁Nb₃Si_13.5B₉ by Continuous CO₂ Laser Overlapping Irradiation
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Synthesis and Characterization of Reduced Graphene Oxide Film as Electronic Material
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Synthesis and Characterization of Reduced Graphene...

Synthesis and Characterization of Reduced Graphene Oxide Film as Electronic Material

Abstract:

Large area graphene oxide (GO) film was prepared by vacuum filtration method through a membrane with a pore size of 25 nm, using GO sheets suspension as raw materials. The film was thermal treated in Ar/H₂ atmosphere at 600°C to make the film electrical conductive. The structure and morphology of the obtained film were investigated by XRD, Raman, FT-IR and SEM. Results showed that most oxygen-containing functional groups in GO film were reduced during the thermal annealing process. The obtained reduced film showed excellent electrical conductivity and the average sheet resistance of the reduced film was 11.3 Ω□^-1.

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Periodical:

Advanced Materials Research (Volumes 287-290)

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2356-2359

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https://doi.org/10.4028/www.scientific.net/AMR.287-290.2356

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Online since:

July 2011

Authors:

Juan Yang, Chuan Liang Zang, Lei Sun, Nan Zhao, Ya Zhou Zhou

Keywords:

Electronic Material, Graphene Oxide Film, Reduction, Vacuum Filtration

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