Synthesis and Characterization of Reduced Graphene Oxide Film as Electronic Material

Abstract:

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Large area graphene oxide (GO) film was prepared by vacuum filtration method through a membrane with a pore size of 25 nm, using GO sheets suspension as raw materials. The film was thermal treated in Ar/H2 atmosphere at 600°C to make the film electrical conductive. The structure and morphology of the obtained film were investigated by XRD, Raman, FT-IR and SEM. Results showed that most oxygen-containing functional groups in GO film were reduced during the thermal annealing process. The obtained reduced film showed excellent electrical conductivity and the average sheet resistance of the reduced film was 11.3 Ω□-1.

Info:

Periodical:

Advanced Materials Research (Volumes 287-290)

Edited by:

Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li

Pages:

2356-2359

DOI:

10.4028/www.scientific.net/AMR.287-290.2356

Citation:

J. Yang et al., "Synthesis and Characterization of Reduced Graphene Oxide Film as Electronic Material", Advanced Materials Research, Vols. 287-290, pp. 2356-2359, 2011

Online since:

July 2011

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Price:

$35.00

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