The Effect of Negative Substrate Bias on the Strain Prosperities of ZnO Films Deposited by PFCVAD

Abstract:

Keeping deposition temperature and oxygen pressure constant at 300°C and 4.0×10^-2Pa, respectively, deposition of ZnO thin films with c-axis oriented (002) hexagonal wurtzite crystal structure was achieved by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at various negative substrate bias on Si(100). The surface morphology was characterized using AFM, and crystallographic structure was studied by means of X-ray diffraction. Based on the biaxial strain model, Strain properties of the ZnO films were investigated by calculation from XRD data. The calculated results revealed that the as-deposited ZnO films exhibited only tensile stress and the tensile stress increased with the elevation of the negative substrate bias. Occurrence of the tensile stress is suggested to be the result of relatively high deposition temperature and the improved deposition rate by elevating the negative substrate bias. It provides a potential method to control the intrinsic stress in the ZnO films by modulation of deposition temperature and the negative substrate bias of PFCVAD system.

• Periodical: Advanced Materials Research (Volumes 287-290)
• Pages: 2373-2380
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.287-290.2373
• Online since: July 2011
• Authors: Yong Zhao, Shuo Hou, Li Guang Fang, Yu Yu Wu, Li Wang, Guang Hu Sheng, Jian Cheng Tang, Ying Liu
• Keywords: Negative Substrate Bias, PFCVAD, Stress, Zinc Oxide (ZnO)

References

[1] Stolt L, Hedstrom J, Kessler J, Ruckh M, Velthaus KO, Schock H W. Appl. Phys. Lett.,1993, 62:597.

[2] Wacogne B, Roe M P, Pattinson T J, Pannell C N . Appl. Phys. Lett.,1995, 67:1674.

[3] Bagnall D M, Chen Y F , Zhu Z , Yao T , Koyama S , Shen M Y,Goto T . Appl. Phys. Lett.,1997, 70:2230.

[4] Ryu Y R , Kim W J , White H W. Cryst Growth, 2000, 219:419.

[5] Tang Z K, Wong G K L, Yu P. Appl. Phys. Lett., 1998, 72: 3270.

[6] Jeong S H, Kim B S, Lee B T. Appl. Phys. Lett.,2003, 82: 2625.

[7] Kashiwaba Y, Sugawara K, Haga K. Thin Solid Films, 2002 , 411:87.

[8] Natsume Y, Sakata H. Thin Solid Films, 2000,372:30.

[9] Jin B J , Im S , Lee S Y. Thin Solid Films, 2000 , 366 : 107.

[10] E. S-enadim, Tu zemen, H. Kavak, R. Esen Physica B, 2007, 390: 366.

[11] D.J. Qiu, H. Z. Wu, A. M. Feng, Y. F. Lao, N. B. Chen, T. N. Xu. Applied Surface Science, 2004, 222: 263.

[12] Yang Bing-chu, Gao Fei, Liu Xiao-yan. Semiconductor Optoelectronics, 2003, 24: 729. (in Chinese)

[13] Li Jianguo, Ye Zhizhen, Huang Jingyun, Zhao Binghui and Wang Lei. Chinese Journal Of Semiconductor, 2007, 28: 275. (in Chinese)

[14] Y. G. Wang, S. P. Lau, H. W. Lee, S. F. Yu, and B. K. Tay. J Appl Phys, 2003, 94: 1597.

[15] H.W. Lee, S.P. Lau, Y.G. Wang, B.K. Taya, H.H. Hng. Thin Solid Films, 2004 ,458:15.

[16] H. Miura, H. Ohta, N. Okamoto. Appl. Phy. Lett., 1992, 60: 2746.

[17] H. Miura, N. Okamoto. J. Appl. Phys., 1994, 75: 4747.