Thermal Stability of Cu/Si (111) Films Prepared by Ionized Cluster Beam Technique

Bo Cao; Yan Hui Jia; Gong Ping Li; Seong Jin Cho; Hee Kim

doi:10.4028/www.scientific.net/AMR.287-290.2369

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Thermal Stability of Cu/Si (111) Films Prepared by...

Thermal Stability of Cu/Si (111) Films Prepared by Ionized Cluster Beam Technique

Abstract:

The Cu films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) system were studied at different annealing temperatures by X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results were obtained: For the Cu/Si (111) samples prepared by ionized cluster beams at V_a=3 kV, the interdiffusion of Cu and Si atoms occurred in the as deposited samples. The RBS spectra features were changed with a very small extent with increasing the annealing temperature. There are no copper-silicide phases observed by XRD before and after being annealed at different temperatures. The reason may be that there is a thermally stable interface between Cu films and Si substrates formed.

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Advanced Materials Research (Volumes 287-290)

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2369-2372

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.287-290.2369

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Online since:

July 2011

Authors:

Bo Cao, Yan Hui Jia, Gong Ping Li, Seong Jin Cho, Hee Kim

Keywords:

Diffusion, Interface Reaction, Ionized Cluster Beam (ICB), Rutherford Backscattering Spectrometry (RBS), Thermal Stability, X-Ray Diffraction (XRD)

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