Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method
The Ge mole fraction (x) of Si1-xGex layer was described by the C-V technique for Schottkey contact of single heterojunction Si1-xGex/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on the Si1-xGex/Si, and C-V technique was used to determine the carrier concentration and structure of double heterojunction Si/Si1-xGex/Si. The change of the structure between Si1-xGex/Si and Si/ Si1-xGex/Si was also observed by this method.
Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu
L. H. Cheng et al., "Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method", Advanced Materials Research, Vols. 295-297, pp. 1568-1572, 2011