Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method

Abstract:

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The Ge mole fraction (x) of Si1-xGex layer was described by the C-V technique for Schottkey contact of single heterojunction Si1-xGex/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on the Si1-xGex/Si, and C-V technique was used to determine the carrier concentration and structure of double heterojunction Si/Si1-xGex/Si. The change of the structure between Si1-xGex/Si and Si/ Si1-xGex/Si was also observed by this method.

Info:

Periodical:

Advanced Materials Research (Volumes 295-297)

Edited by:

Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu

Pages:

1568-1572

DOI:

10.4028/www.scientific.net/AMR.295-297.1568

Citation:

L. H. Cheng et al., "Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method", Advanced Materials Research, Vols. 295-297, pp. 1568-1572, 2011

Online since:

July 2011

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$35.00

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