Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method

Li Hong Cheng; L. Yu; F. Yu; Z.Z. Lu; Xiang Fu Zhao; Ping Han; H. Zhao; Z.L. Xie; X.Q. Xiu; R. Zhang; Y.D. Zheng

doi:10.4028/www.scientific.net/AMR.295-297.1568

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 295-297Determination of Ge Fraction and Carrier...

Determination of Ge Fraction and Carrier Concentration in Si_1-XGe_x/Si by Capacitance-Voltage Method

Abstract:

The Ge mole fraction (x) of Si_1-xGe_x layer was described by the C-V technique for Schottkey contact of single heterojunction Si_1-xGe_x/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on the Si_1-xGe_x/Si, and C-V technique was used to determine the carrier concentration and structure of double heterojunction Si/Si_1-xGe_x/Si. The change of the structure between Si_1-xGe_x/Si and Si/ Si_1-xGe_x/Si was also observed by this method.