Optimized Simulation for GaN Growth in Vertical HVPE Reactor

Abstract:

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The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. The deposition of GaN with the variation of the gas flow inlet velocities is investigated. The influence of diffusion coefficient on the deposition of GaN is also discussed. It is found that the influence of the gas flow inlet velocities on the deposition is large and the influence of diffusion coefficient on the deposition of GaN is small in vertical HVPE.

Info:

Periodical:

Advanced Materials Research (Volumes 301-303)

Edited by:

Riza Esa and Yanwen Wu

Pages:

116-120

DOI:

10.4028/www.scientific.net/AMR.301-303.116

Citation:

C. Z. Zhao et al., "Optimized Simulation for GaN Growth in Vertical HVPE Reactor", Advanced Materials Research, Vols. 301-303, pp. 116-120, 2011

Online since:

July 2011

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Price:

$35.00

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