Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition

Abstract:

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Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.

Info:

Periodical:

Advanced Materials Research (Volumes 306-307)

Edited by:

Shiquan Liu and Min Zuo

Pages:

167-170

DOI:

10.4028/www.scientific.net/AMR.306-307.167

Citation:

Y. L. Tu et al., "Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition", Advanced Materials Research, Vols. 306-307, pp. 167-170, 2011

Online since:

August 2011

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Price:

$35.00

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