Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition

Yu Li Tu; Yan Hao Huang; Ling Min Kong; Kung Yen Lee; Ling Yun Jang; Chin Che Tin; Chee Wee Liu; Zhe Chuan Feng

doi:10.4028/www.scientific.net/AMR.306-307.167

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 306-307Synchrotron Radiation X-Ray Absorption and Optical...

Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition

Abstract:

Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.

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Advanced Materials Research (Volumes 306-307)

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167-170

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.306-307.167

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Online since:

August 2011

Authors:

Yu Li Tu, Yan Hao Huang, Ling Min Kong, Kung Yen Lee, Ling Yun Jang, Chin Che Tin, Chee Wee Liu, Zhe Chuan Feng

Keywords:

3C-SiC, Photoluminescence (PL), Raman Scattering, Synchrotron Radiation, UV, X-Ray Absorption

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