Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition
Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.
Shiquan Liu and Min Zuo
Y. L. Tu et al., "Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition", Advanced Materials Research, Vols. 306-307, pp. 167-170, 2011