Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors

Hiroaki Yano; Li Cai; Toshio Hirao; Zong Fan Duan; Yutaro Takayanagi; Hirokuni Ohuchi; Hideharu Ueki; Takeshi Ohshima; Yasushiro Nishioka

doi:10.4028/www.scientific.net/AMR.306-307.185

Paper Titles

Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition
p.167

Luminescence in Rare Earth Activated AlPO₄ Phosphor
p.171

Synthesis and Photoluminescence of Cr-Doped Rod-Like ZnO Particles by Hydrothermal Method
p.176

Silicon Microfabrication Processes Including Anodic Bonding of Extremely Thin (60 μm –Thick) Silicon on Glass
p.180

Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors
p.185

Fabrication of Condenser Microphones on Silicon on Insulator Wafer
p.193

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate
p.201

Two Novel Tetrahedrally Silicon-Based Benzimidazole Derivatives: Potentials as Blue Emitters for OLEDs
p.206

Study on Hydrothermal Synthesis of LaPO₄:Eu³⁺ Materials
p.211

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 306-307Characteristics of Gamma–Ray Irradiated Pentacene...

Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors

Abstract:

P-channel pentacene field effect transistorswith a Si/SiO₂/pentacene/Au structure were fabricated, and were gamma-ray irradiated with a Co⁶⁰ source. The changes of the drain current I_D vs. source/drain voltage V_SD (I_D - V_SD) characteristics were measured after every 200 Gy in silicon (Gy_Si) irradiations up to the total dose of 1200 Gy_Si. The drain current I_D continuously decreased to less than 10 % of that before irradiation after 1200 Gy_Si irradiation. The threshold voltage V_th continuously decreased up to 800 Gy_Si, started to saturate above 800 Gy_Si,and recovered above1000 Gy_Si. The mobility m continued to decrease up to 1200 Gy_Si. Those behaviors were explained by accumulation of positive trapped charge within the gate insulator SiO₂ near the interface, continuous increase of interface traps near the interface between the SiO₂ and pentacene, and build up of electrons in the channel regions. These behaviors were discussed in comparisons with previously reported results on ultraviolet (UV) light irradiation experiments on similarly structured pentacene-based transistors.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 306-307)

Pages:

185-192

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.306-307.185

Citation:

Cite this paper

Online since:

August 2011

Authors:

Hiroaki Yano, Li Cai, Toshio Hirao, Zong Fan Duan, Yutaro Takayanagi, Hirokuni Ohuchi, Hideharu Ueki, Takeshi Ohshima, Yasushiro Nishioka

Keywords:

Co⁶⁰, OTFT, Pentacene, Radiation Damage, SiO₂, UV Light, γ-Ray

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C. Reese, M. Robert, M. M. Ling and Z. Bao: Mater. Today Vol. 7 (2004), p.20.

Google Scholar

[2] C. D. Dimitrakopoulos and P. R. L. Malenfant: Adv. Mater. Vol. 14 (2002), p.99

Google Scholar

[3] G. Horowitz: Adv. Mater. Vol. 10 (1998), p.365

Google Scholar

[4] J. Zaumseil, T. Someya, Z.Bao, Y. LOO, R.Cirelli and J.A. Rogers: Appl. Phys. Lett. Vol. 82 (2003), p.793.

Google Scholar

[5] M. Kitamura and Y. Arakawa: J. Phys. Condens. Matter. Vol. 20 (2008), p.184011

Google Scholar

[6] H. Nishizawa and Y. Majima, Jpn. J. Appl. Phys. Vol. 45 (2006), L27

Google Scholar

[7] E. Lim, T. Manaka, R. Tamura and M. Iwamoto, Jpn. J. Appl. Phys. Vol.45 (2006), p.3712

Google Scholar

[8] T. Inenaga, J. Matsushita, M. Yamada, H. Fukai and Y. Nishioka, Mol. Crys. & Liq. Crys. Vol.471 (2007), p.195.

Google Scholar

[9] Y. Suzue, T. Manaka and M. Iwamoto, Jpn. J. Appl. Phys. Vol. 44 (2005), p.561

Google Scholar

[10] S. Ogawa, T. Naijo, Y. Kimura, H. Ishii and M. Niwano, Jpn. J. Appl. Phys. Vol. 45 (2006), p.530

Google Scholar

[11] Y.-Y. Noh, D.-Y. Kim and K. Yase, J. Appl. Phys. Vol. 98 (2005), 074505

Google Scholar

[12] Y.-Y. Noh, J. Ghim, S.-J. Kang and K. Yase, J. Appl. Phys. Vol. 100 (2006) p.094501

Google Scholar

[13] E. E. King, G. P. Nelson and H. L. Huges, IEEE Trans. Nucl. Sci. NS-16 (1972) p.264

Google Scholar

[14] J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer and D. C. Turpin, IEEE Trans. Nucl. Sci. NS-31 (1984) p.1434

DOI: 10.1109/tns.1984.4333525

Google Scholar