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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324New Approaches to In Situ Doping of SiC Epitaxial...

New Approaches to In Situ Doping of SiC Epitaxial Layers

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Abstract:

In this paper, the issues related to in-situ doping of silicon carbide (SiC) semiconductor during epitaxial growth are reviewed. Some of these issues can find solution by using an original approach called vapour-liquid-solid (VLS) mechanism. In this technique, the SiC seed is covered by a Sibased melt and is fed by propane in order to growth the epitaxial film. Using Al-Si melts and temperatures as low as 1100°C, very high p type doping was demonstrated, with a record value of 1.1021 at.cm-3. It leads to very low contact resistivity and even to metallic behaviour of the SiC deposit even at low temperature. Using Ge-Si melts, non intentionally low doped n type layers are grown. By forming Si-containing liquid droplets on a SiC seed, one can extrapolate this VLS growth to selective epitaxial growth (SEG). Such approach was successfully applied for both Al and Ge-based systems in order to form p+ and n doped areas respectively.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

14-19

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.14

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Online since:

August 2011

Authors:

Gabriel Ferro

Keywords:

CVD, Doping, Epitaxy, n-Type, p-Type, Silicon Carbide (SiC), VLS

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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